Performance Enhancement of 0.13μm In0.65GaAs PHEMT by Reduction of Parasitic Effect Using Novel Double-Deck Shaped (DDS) Gate Structure

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 723-726

  Kim, Dae Hyun ^a   Yeon, Seong Jin ^a   Lee, Jae Hak ^b   Seo, Kwang Seok ^a  

^a Seoul National University   (South Korea)

^b F11 Telson Venture Tower   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CONTACTS; ENERGY GAP; GATES (TRANSISTOR); IMPACT IONIZATION; LINEAR EQUATIONS; METALLIZING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

DOUBLE DECK SHAPED (DDS) GATE STRUCTURE; GATE FRINGING CAPACITANCE; HOLE CURRENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0842288181     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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