Strain relaxation in GaN grown on vicinal 4H-SiC (0001) substrates

Journal of Applied Physics

Volumn 101, Issue 3, 2007, Pages

  Pernot, J ^a   Bustarret, E ^a   Rudzinski M ^b   Hageman, P R ^b   Larsen, P K ^b  

^a CNRS   (France)

^b RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH (MATERIALS); RAMAN SCATTERING; RELAXATION PROCESSES; SILICON CARBIDE; STRAIN; X RAY DIFFRACTION ANALYSIS;

HOMOGENEOUS TENSILE IN-PLANE STRESSES; STRAIN RELAXATION MECHANISMS; THREADING DISLOCATIONS;

GALLIUM NITRIDE;

EID: 33847113242     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2435072     Document Type: Article

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