Ion beam deposition of α-Ta films by nitrogen addition and improvement of diffusion barrier property

Thin Solid Films

Volumn 515, Issue 11, 2007, Pages 4768-4773

  Bae, Joon Woo ^a   Lim, Jae Won ^b   Mimura, Kouji ^a   Isshiki, Minoru ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Korea Institute of Geosceince and Mineral Resources   (South Korea)

Author keywords

phase; Diffusion barrier; Ion beam deposition; Resistivity; Ta film

Indexed keywords

ELECTRIC CONDUCTIVITY; ION BEAM ASSISTED DEPOSITION; MORPHOLOGY; NITROGEN; SILICON; SUBSTRATES; TANTALUM;

DIFFUSION BARRIER; ION BEAM DEPOSITION; PRESSURE RATIOS; TA FILM;

THIN FILMS;

EID: 33847105588     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.190     Document Type: Article

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