Improvement of Ta barrier film properties in Cu interconnection by using a non-mass separated ion beam deposition method

Materials Transactions

Volumn 43, Issue 3, 2002, Pages 478-481

  Lim, Jae Won ^a   Ishikawa, Yukio ^a   Miyake, Kiyoshi ^a   Yamashita, Mutsuo ^a   Isshiki, Minoru ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Diffusion barrier; Ion beam deposition; Resistivity; Tantalum

Indexed keywords

COPPER; DEPOSITION; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ION BEAMS; ION SOURCES; PLASMA DENSITY; POSITIVE IONS; SILICON; TANTALUM; THERMODYNAMIC STABILITY;

COPPER INTERCONNECTION; MIGRATION ENERGY; NONMASS SEPARATED ION BEAM DEPOSITION METHOD; SUBSTRATE BIAS VOLTAGE; TANTALUM BARRIER FILM PROPERTIES;

SEMICONDUCTING FILMS;

EID: 0036505981     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.43.478     Document Type: Article

References (20)