Optical and electrical characterization of annealed silicon-implanted GaN

Semiconductor Science and Technology

Volumn 19, Issue 2, 2004, Pages 142-146

  Wang, H T ^a   Tan, L S ^a   Chor, E F ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; DAMAGE REMOVAL; DOPANT ACTIVATION; PARTIAL RECOVERY; POST IMPLANT ANNEALING;

ANNEALING; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; HALL EFFECT; ION IMPLANTATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POINT DEFECTS; RAMAN SCATTERING; SILICON; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE;

EID: 1242265554     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/2/002     Document Type: Article

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