Temperature dependence of electron impact ionization in In 0.53Ga0.47As

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2322-2324

  Tan, C H ^a   Rees, G J ^a   Houston, P A ^a   Ng, J S ^a   Ng, W K ^a   David, J P R ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LEVELS; ENERGY GAP; HETEROJUNCTION BIPOLAR TRANSISTORS; IMPACT IONIZATION; INTERPOLATION; KINETIC ENERGY; MONTE CARLO METHODS; PHOTODIODES; THERMAL EFFECTS;

AVALANCHE PHOTODIODES (APD); ELECTRON CONDUCTION BANDS; ELECTRON DISTRIBUTION; ROOM TEMPERATURE;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 2142715994     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1691192     Document Type: Article

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