A CMOS-compatible rapid vapor-phase doping process for CMOS scaling

IEEE Transactions on Electron Devices

Volumn 51, Issue 1, 2004, Pages 14-19

  Uchino, Takashi ^a   Ashburn, Peter ^a   Kiyota, Yukihiro ^b   Shiba, Takeo ^b  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b HITACHI LTD   (Japan)

Author keywords

CMOS process; Doping; Junction; MOSFET

Indexed keywords

ELECTRIC CURRENTS; MOSFET DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

RAPID VAPOR PHASE DOPING PROCESS; SOLID PHASE DIFFUSION;

CMOS INTEGRATED CIRCUITS;

EID: 0742286726     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.820643     Document Type: Article

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