-
1
-
-
33846943887
-
-
ITRS INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS 2005 EDITION, FRONT END PROCESSES
-
ITRS INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS 2005 EDITION, FRONT END PROCESSES
-
-
-
-
2
-
-
0030288186
-
Plasma immersion ion implantation - a fledging technique for semiconductor processing
-
P.K. Chu et al : Plasma immersion ion implantation - a fledging technique for semiconductor processing. Materials Science and engineering, R17 1996 207-280
-
(1996)
Materials Science and engineering
, vol.R17
, pp. 207-280
-
-
Chu, P.K.1
-
4
-
-
0002568355
-
Ion implantation by plasma immersion : Interest, limitations and perspectives
-
F. Le Cœur et al. : Ion implantation by plasma immersion : interest, limitations and perspectives. Surface and Coating technology 125 (2000) 71-78
-
(2000)
Surface and Coating technology
, vol.125
, pp. 71-78
-
-
Le Cœur, F.1
-
5
-
-
22844454765
-
Plasma doping for shallow junctions
-
Sep/Oct
-
M.J. Goeckner et al. : Plasma doping for shallow junctions, J. Vac. Sci. Technol. B 17(5), Sep/Oct 1999
-
(1999)
J. Vac. Sci. Technol. B
, vol.17
, Issue.5
-
-
Goeckner, M.J.1
-
6
-
-
85088349998
-
2LAD Implantation with Si-PAI for shallow, abrupt and high quality p+/n junctions formed using low temperature
-
2LAD Implantation with Si-PAI for shallow, abrupt and high quality p+/n junctions formed using low temperature SPE annealing.
-
SPE annealing
-
-
Felch, S.1
-
7
-
-
4243645935
-
Recent Applications of Plasma Immersion Ion Implantation
-
June
-
P.K.Chu : Recent Applications of Plasma Immersion Ion Implantation. Semiconductor international / 165, June 1996.
-
(1996)
Semiconductor international
, vol.165
-
-
Chu, P.K.1
-
8
-
-
0037464228
-
The importance of bias pulse rise time for determining shallow implanted dose in plasma ion implantation
-
24 March
-
P.K. Chu, D.T.KWok et al : The importance of bias pulse rise time for determining shallow implanted dose in plasma ion implantation. Appl. Phys. Lett. Vol 82, No 12, 24 March 2003
-
(2003)
Appl. Phys. Lett
, vol.82
, Issue.12
-
-
Chu, P.K.1
KWok, D.T.2
-
9
-
-
0036641559
-
Plasma doping for the fabrication of ultra shallow junctions
-
S.B.Felch et al. : Plasma doping for the fabrication of ultra shallow junctions. Surface and Coatings Technology 156 (2002) 229-236.
-
(2002)
Surface and Coatings Technology
, vol.156
, pp. 229-236
-
-
Felch, S.B.1
-
10
-
-
0036942461
-
Results from SRTF show promise for shallow junction implant anneal
-
Dec
-
Woo Sik Yoo et al. : Results from SRTF show promise for shallow junction implant anneal. Solid State Technology. Dec 2002
-
(2002)
Solid State Technology
-
-
Sik Yoo, W.1
-
12
-
-
22844454765
-
Plasma doping for shallow junctions
-
Sept/Oct
-
M.J Goeckner, S.B. Felch et al : Plasma doping for shallow junctions J. Vac. Sci. Technol. B 13(5) Sept/Oct 1999,p. 2290-2293
-
(1999)
J. Vac. Sci. Technol. B
, vol.13
, Issue.5
, pp. 2290-2293
-
-
Goeckner, M.J.1
Felch, S.B.2
-
13
-
-
0031365658
-
Neaw doping technology-Plasma Doping for Next Generation CMOS process with Ultra Shallow Junction- LSI yield and surface contamination issues
-
M. Takase, B. Mizuno : Neaw doping technology-Plasma Doping for Next Generation CMOS process with Ultra Shallow Junction- LSI yield and surface contamination issues. IEEE 0-7803-3752-2 /97.
-
IEEE 0-7803-3752-2 /97
-
-
Takase, M.1
Mizuno, B.2
-
14
-
-
0036642326
-
The fabrication of advanced transistors with plasma doping
-
D. Lenoble et al. : The fabrication of advanced transistors with plasma doping. Surface and Coatings Technology 156(2002). 262-266.
-
(2002)
Surface and Coatings Technology
, vol.156
, pp. 262-266
-
-
Lenoble, D.1
-
15
-
-
85088349159
-
-
ème cycle soutenue le 13/12/2000.
-
ème cycle soutenue le 13/12/2000.
-
-
-
-
16
-
-
2142737101
-
Direct comparison of electrical performance of 0.1 μm pMOSFET's doped by plasma doping or low energy ion implantation
-
D. Lenoble : Direct comparison of electrical performance of 0.1 μm pMOSFET's doped by plasma doping or low energy ion implantation. International conference on ion implantation technology 2000.
-
(2000)
International conference on ion implantation technology
-
-
Lenoble, D.1
-
17
-
-
33846971127
-
Shallow Source / Drain extensions for pMOSFET's with High Activation and low Process Damaged Fabricated by Plasma Doping
-
M. Takase et al. : Shallow Source / Drain extensions for pMOSFET's with High Activation and low Process Damaged Fabricated by Plasma Doping. IEEE 0-7803-4100-7/97.
-
IEEE 0-7803-4100-7/97
-
-
Takase, M.1
-
19
-
-
33846985508
-
-
F. TORREGROSA, C. LAVIRON, F. MILESI, Miguel HERNADEZ H. FAIK, Julien VENTURINI; Ultra shallow P+/N junctions using Plasma immersion ion implantation and laser annealing for sub 0.1 μm CMOS devices. IIT 2005 Taipe
-
F. TORREGROSA, C. LAVIRON, F. MILESI, Miguel HERNADEZ H. FAIK, Julien VENTURINI; Ultra shallow P+/N junctions using Plasma immersion ion implantation and laser annealing for sub 0.1 μm CMOS devices. IIT 2005 Taipe
-
-
-
-
20
-
-
17644411081
-
Realization of ultra shallow junctions by PIII, application to solar cells. (PBII-2003), San Antonio, USA, 16-19 Sept. 2003
-
F. TORREGROSA, C. LAVIRON, H. FAIK, D. BARAKEL, F. MILESI, S. BECCACCIA : Realization of ultra shallow junctions by PIII, application to solar cells. (PBII-2003), San Antonio, USA, 16-19 Sept. 2003. Surface & Coating Technology 186(2004) 93-98..
-
(2004)
Surface & Coating Technology
, vol.186
, pp. 93-98
-
-
TORREGROSA, F.1
LAVIRON, C.2
FAIK, H.3
BARAKEL, D.4
MILESI, F.5
BECCACCIA, S.6
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