Results from SRTF show promise for shallow junction ion implant anneal

Solid State Technology

Volumn 45, Issue 12, 2002, Pages 55-56+58+61

  Yoo, Woo Sik ^a   Fukada, Takashi ^a   Komatsubara, Riu ^b   Yamamoto, Jiro ^c  

^a WaferMasters Inc   (United States)

^b TOKYO ELECTRON LTD   (Japan)

^c NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; TEMPERATURE CONTROL; TEMPERATURE MEASUREMENT; THERMAL DIFFUSION IN SOLIDS; THERMOCOUPLES;

ELECTRICAL ACTIVATION; RAPID THERMAL PROCESSING; SHALLOW JUNCTION; SINGLE WAFER RAPID THERMAL FURNACE; SPIKE ANNEALING;

ION IMPLANTATION;

EID: 0036942461     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (7)

1. J.K. Truman, et al., Proc. 7th Int. Conf. on Advanced Thermal Processing of Semiconductors, RTP'99, Colorado Springs, 1999, 6.
2. C. Ratliff, et al., Proc. 7th Int. Conf. on Advanced Thermal Processing of Semiconductors, RTP'99, Colorado Springs, 1999, 16.
3. A.L. Helms Jr., R.B. Herring, C. Porter, A. Starner, Solid State Technology, p. 83, Nov. 1999.
4. F. Roozeboom, Advances in Rapid Thermal and Integrated Processing, ed. F. Roozeboom, NATO ASI Series E, Vol. 318, The Netherlands, 1996, Chap. 1.
5. W.S. Yoo, A.J. Atanos, J.F. Daviet, Jpn. J. Appl. Phys. Lett., 37, 1998, L1135.
6. W.S. Yoo, et al., Jpn. J. Appl. Phys., Vol. 39, 2000, 6143
7. W.S. Yoo, T. Fukada, R. Komatsubara, J. Yamamoto, Semiconductor Fabtech, 14, 2001, 243.