A finite element study of process induced stress in the transistor channel: Effects of suicide contact and gate stack

Proceedings of the 5th International Conference on Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2004

Volumn , Issue , 2004, Pages 61-68

  Torregiani, C ^a,b   Liu, J ^c   Vandevelde, B ^a   Degryse, D ^a   Van Dal, M J ^d   Benedetti, A ^a   Lauwers, A ^a   Maex, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c STANFORD UNIVERSITY   (United States)

^d PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COEFFICIENT OF THERMAL EXPANSION (CTE); GATE STACKS; SILICIDE CONTACTS; TRANSISTOR CHANNELS;

COMPUTER SIMULATION; COMPUTER SOFTWARE; COOLING; FINITE ELEMENT METHOD; GAIN CONTROL; HIGH TEMPERATURE EFFECTS; MOSFET DEVICES; SEMICONDUCTING SILICON; STRAIN; STRESS ANALYSIS; THERMAL EXPANSION;

GATES (TRANSISTOR);

EID: 3843056826     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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