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Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 77, Issue 1, 2000, Pages 67-72

Analysis of interface states of n-InP MIS structures based on bias dependence of capacitance and photoluminescence intensity

(4) Ahaitouf, A a Bath, A b Thevenin, P b Abarkan, E a

a SIDI MOHAMED BEN ABDELLAH UNIVERSITY (Morocco)

b UNIVERSITÉ DE LORRAINE (France)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CAPACITANCE MEASUREMENT; LEAKAGE CURRENTS; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM PHOSPHIDE; VOLTAGE MEASUREMENT;

BORON NITRIDE; INTERFACE STATES DISTRIBUTION;

MIS DEVICES;

EID: 0034245567 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(00)00475-X Document Type: Article

Times cited : (13)

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