Isolated self-assembled InAs/InP(001) quantum wires obtained by controlling the growth front evolution

Nanotechnology

Volumn 18, Issue 3, 2007, Pages

  Fuster, David ^a   Alén, Benito ^a   González, Luisa ^a   González, Yolanda ^a   Martínez Pastor, Juan ^b   González, María Ujué ^a,c   García, Jorge M ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^b UNIVERSITY OF VALENCIA   (Spain)

^c ICFO INSTITUT DE CIENCIES FOTONIQUES   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

NANOSTRUCTURED MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; STRESS ANALYSIS;

CRITICAL THICKNESS; GROWTH FRONT EVOLUTION; IN SITU MEASUREMENT; STRESS EVOLUTION;

SEMICONDUCTOR QUANTUM WIRES;

EID: 33846815383     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/3/035604     Document Type: Article

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