Stress evolution aspects during InAs/InP (001) quantum wires self-assembling

Microelectronics Journal

Volumn 35, Issue 1, 2004, Pages 13-17

  Gonzalez M U ^a   Gonzalez L ^a   Garcia J M ^a   Gonzalez Y ^a   Silveira, J P ^a   Briones, F ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

Nanostructures; Quantum wires; Self assembling

Indexed keywords

ANISOTROPY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; STRESS ANALYSIS;

STRESS ANISOTROPY;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0242439480     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00213-1     Document Type: Conference Paper

References (28)

1. Asada M., Miyamoto M., Suematsu Y. Gain and the threshold of three-dimensional quantum box lasers. IEEE J. Quantum Electron. QE-22:1986;1915-1921.
2. Weber A., Gauthier-Lafaye O., Julien F.H., Brault J., Gendry M., Désieres Y., Benyattou T. Strong normal incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001). Appl. Phys. Lett. 74:(3):1999;413-415.
3. Chen G., Bonadeo N.H., Steel D.G., Gammon D., Katzer D.S., Park D., Sham L.J. Optically induced entanglement of excitons in a single quantum dot. Science. 289:2000;1906-1909.
4. Seifert W., Carlsson N., Miller M., Pistol M.-E., Samuelson L., Wallenberg L.R. In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode. Prog. Cryst. Growth Charact. 33:1996;423-471.
5. Park G., Shchekin O.B., Csutak S., Huffaker D.L., Deppe D.G. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser. Appl. Phys. Lett. 75:(21):1999;3267-3269.
6. Fafard S., Wasilewski Z., McCaffrey J., Raymond S., Charbonneau S. InAs self-assembled quantum dots on InP by molecular beam epitaxy. Appl. Phys. Lett. 68:(7):1996;991-993.
7. Marchand H., Desjardins P., Guillon S., Paultre F.-E., Bougrioua Z., Yip R.Y.-F., Masut R.A. Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001). Appl. Phys. Lett. 71:(4):1997;527-529.
8. Walther C., Hoerstel W., Niehus H., Erxmeyer F., Masselink W.T. Growth, structural and electrical investigation of self-assembled InAs quantum wires on (001)InP. J. Cryst. Growth. 209:2000;572-580.
9. Li H., Wu J., Wang Z., Daniels-Race T. High density InAs nanowires realized in situ on InP. Appl. Phys. Lett. 75:(8):1999;1173-1175.
10. González L., García J.M., García R., Briones F., Martínez-Pastor J., Ballesteros C. Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures. Appl. Phys. Lett. 76:(9):2000;1104-1106.
11. Li Y.F., Lin F., Xu B., Liu F.Q., Ye X.L., Ding D., Wang Z.G. Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy. J. Cryst. Growth. 223:2001;518-522.
12. Gutiérrez H.R., Cotta M.A., De Carvalho M.M.G. Faceting evolution during self-assembling of InAs/InP quantum wires. Appl. Phys. Lett. 79:(23):2001;3854-3856.
13. Yang H., Ballet P., Salamo G.J. Formation of quantum wires and dots on InP(001) by As/P exchange. J. Appl. Phys. 89:(12):2001;7871-7874.
14. Brault J., Gendry M., Grenet G., Hollinger G., Olivares J., Salem B., Benyattou T., Bremond G. Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001). J. Appl. Phys. 92:(1):2002;506-510.
15. Floro J.A., Lucadamo G.A., Chason E., Freund L.B., Sinclair M., Twesten R.D., Hwang R.Q. SiGe island shape transitions induced by elastic repulsion. Phys. Rev. Lett. 80:(21):1998;4717-4720.
16. García J.M., Silveira J.P., Briones F. Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001). Appl. Phys. Lett. 77:(3):2000;409-411.
17. 1- xAs/InP heterostructures: a re-evaluation using ultrathin quantum wells as a probe. J. Appl. Phys. 75:(3):1994;1501-1510.
18. Aspnes D.E., Tamargo M.C., Brasil M.J.S.P., Nahory R.E., Schwarz S.A. As capture and the growth of ultrathin InAs layers on InP. Appl. Phys. Lett. 64:(24):1994;3279-3281.
19. Sobiesierski Z., Westwood D.I., Parbrook P.J., Ozanyan K.B., Hopkinson M., Whitehouse C.R. As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy. Appl. Phys. Lett. 70:(11):1997;1423-1425.
20. Suh K.Y., Lee H.H., Yoon E. Two-step kinetics on As/P exchange reaction. J. Appl. Phys. 85:(1):1999;233-236.
21. Alén B., Martínez-Pastor J., García-Cristobal A., González L., García J.M. Optical transitions and excitonic recombination in InAs/InP self assembled quantum wires. Appl. Phys. Lett. 78:(25):2001;4025-4027.
22. 1-xAs/InP quantum wires. Phys. Status Solidi (a). 190:(3):2002;763-768.
23. Silveira J.P., Briones F. In situ observation of reconstruction related surface stress during molecular beam epitaxy (MBE) growth of III-V compounds. J. Cryst. Growth. 201-202:1999;113-117.
24. González M.U., González Y., González L. Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements. Appl. Phys. Lett. 81:(22):2002;4162-4164.
25. García J.M., González L., González M.U., Silveira J.P., González Y., Briones F. InAs/InP (001) quantum wire formation due to anisotropic stress relaxation: in situ stress measurements. J. Cryst. Growth. 227-228:2001;975-979.
26. A. Mazuelas, L. González, J. M. García, Y. González, H.T. Metzger, Strain determination in MBE grown InAs quantum wires on InP substrates, presented at E-MRS 2002 Spring Meeting, Strasbourg, 2002.
27. Ohlsson B.J., Miller M.S. Growth of strained GaAs islands on (001) GaP: a RHEED study of quantum wire formation. J. Cryst. Growth. 188:1998;387-391.
28. González M.U., García J.M., González L., Silveira J.P., González Y., Gómez J.D., Briones F. In situ measurements of As/P exchange during InAs/InP (001) quantum wires growth. Appl. Surf. Sci. 188:2002;188-192.