Photoemission studies of initial oxidation for ultra-thin zinc film on 6H-SiC(0 0 0 1) surface with synchrotron radiation

Applied Surface Science

Volumn 253, Issue 8, 2007, Pages 3761-3765

  Zou, C W ^a,b   Wu, Y Y ^a   Sun, B ^a   Xu, P S ^a   Pan, H B ^a   Xu, F Q ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b Wuhan National Laboratory for Optoelectronics   (China)

Author keywords

6H SiC; Photoemission; Synchrotron radiation; Thermal oxidation; Zinc oxide (ZnO)

Indexed keywords

CRYSTAL ORIENTATION; EVAPORATION; OXIDATION; PHOTOEMISSION; SYNCHROTRON RADIATION; ULTRATHIN FILMS;

EVAPORATION TEMPERATURE; METALLIC ZINC ATOM; OXYGEN FLUX; SYNCHROTRON RADIATION PHOTOELECTRON SPECTROSCOPY (SRPES);

ZINC;

EID: 33846619644     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.07.095     Document Type: Article

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