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Volumn 4, Issue , 2004, Pages 190-193

Self-consistent numerical model and optimization of two-dimensional electron gases for AlGaN/GaN HEMT

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRON GAS; GALLIUM NITRIDE; MICROWAVE DEVICES; PIEZOELECTRICITY; POISSON EQUATION; POLARIZATION; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMODYNAMIC STABILITY;

EID: 3543059465     PISSN: None     EISSN: None     Source Type: Book    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (8)
  • 1
    • 0032181962 scopus 로고    scopus 로고
    • Growth and applications of Group III-Nitrides
    • O.Ambacher, Growth and applications of Group III-Nitrides, J.Phys.D :Appl.Phys.,vol.31(1998) 2653
    • (1998) J.Phys.D :Appl.Phys. , vol.31 , pp. 2653
    • Ambacher, O.1
  • 3
    • 36549100456 scopus 로고
    • A self-consistent solution of schrodinger-poisson equation using a nonuniform mesh
    • Tan I-H, Snider G.L, Chang L.D, et al. A self-consistent solution of schrodinger-poisson equation using a nonuniform mesh. J.Appl. Phys. 1990; 68 (8): 4071
    • (1990) J.Appl. Phys. , vol.68 , Issue.8 , pp. 4071
    • Tan, I.-H.1    Snider, G.L.2    Chang, L.D.3
  • 4
    • 0035279717 scopus 로고    scopus 로고
    • Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN, heterojunction modulation doped FETs
    • Sacconi Fabio., Carlo Aldo Di, Lugli P. et al , Spontaneous and Piezoelectric Polarization Effects on the Output Characteristics of AlGaN/GaN, Heterojunction Modulation Doped FETs , IEEE Transaction On electron Device, 2001, 48 (3): 450
    • (2001) IEEE Transaction on Electron Device , vol.48 , Issue.3 , pp. 450
    • Fabio, S.1    Di, C.A.2    Lugli, P.3
  • 5
    • 0001590229 scopus 로고    scopus 로고
    • Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- And Ga-face AlGaN/GaN heteostructures
    • Ambacher O. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heteostructures. Journal of applied physics. 1999; 85 (6): 3222
    • (1999) Journal of Applied Physics , vol.85 , Issue.6 , pp. 3222
    • Ambacher, O.1
  • 6
    • 0034140885 scopus 로고    scopus 로고
    • Two-dimensional hole gas induced by piezoelectric and pyroelectric charges
    • Shur M.S, Bykhovski A.D, Gaska R. Two-dimensional hole gas induced by piezoelectric and pyroelectric charges, solid-state electronics. 2000; 44: 205
    • (2000) Solid-state Electronics , vol.44 , pp. 205
    • Shur, M.S.1    Bykhovski, A.D.2    Gaska, R.3
  • 7
    • 0036568264 scopus 로고    scopus 로고
    • Rashmi, Kranti Abhinav, Haldar S, et al. An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs. solid-state electronics. 2002; 46: 621
    • (2002) Solid-state Electronics , vol.46 , pp. 621
    • Abhinav, K.1    Haldar, S.2
  • 8
    • 49849110942 scopus 로고
    • Iteration methods for calculating self-consistent fields in semiconductor inversion layers
    • Stern Frank. Iteration Methods for Calculating self-Consistent Fields in Semiconductor Inversion Layers. Journal of Computational Physics. 1970; 6: 56-67
    • (1970) Journal of Computational Physics , vol.6 , pp. 56-67
    • Frank, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.