Evolution of W optical center in Si-implanted epitaxial SiGe at low temperature annealing

Applied Physics Letters

Volumn 90, Issue 4, 2007, Pages

  Tan, J ^a   Davies, G ^b   Hayama, S ^b   Larsen, A Nylandsted ^c  

^a CHINA UNIVERSITY OF GEOSCIENCES   (China)

^b KING'S COLLEGE LONDON   (United Kingdom)

^c AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; EPITAXIAL GROWTH; ION IMPLANTATION; LOW TEMPERATURE OPERATIONS; PHOTOLUMINESCENCE;

LOW TEMPERATURE ANNEALING; OPTICAL CENTER; OUTDIFFUSION; TRANSIENT ENHANCED DIFFUSION;

SILICON ALLOYS;

EID: 33846564529     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2435976     Document Type: Article

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