The different behaviour of CiOi and CiCs defects in SiGe

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 58-61

  Tan, J ^a   Davies, G ^b   Hayama, S ^b   Markevich, V P ^c  

^a CHINA UNIVERSITY OF GEOSCIENCES   (China)

^b KING'S COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

Carbon; Defect; DLTS; Photoluminescence; SiGe

Indexed keywords

CARBON; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC EXCITATION; GERMANIUM COMPOUNDS; PHOTOLUMINESCENCE;

ALLOY COMPOSITION; CARBON-RELATED DEFECTS; PHOTOLUMINESCENCE (PL) SPECTRA; ZERO-PHONON LINES;

SILICON COMPOUNDS;

EID: 33744548943     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.009     Document Type: Article

References (15)

1. Paul D. Phys World 13 (2000) 27
2. Jain S.C., Schoenmaker W., Lindsay R., Stolkv P.A., Decoutere S., Willander M., et al. J Appl Phys 91 (2002) 8919
3. Ngau J.L., Griffin P.B., and Plumer J.D. J Appl Phys 90 (2001) 1768
4. Stolk P.A., Gossmann H.-J., Eaglesham D.J., and Poate J.M. Mater Sci Eng B 36 (1996) 275
5. Davies G. Phys Rep 176 (1989) 83
6. Mesli A., and Larsen A.N. Nucl Instr and Meth Phys Res B 211 (2003) 80
7. Pedersen T.P.L., Larsen A.N., and Mesli A. Appl Phys Lett 75 (1999) 4085
8. Larsen A.N., Hansen A.B., Reitze D., Goubel J.J., Fage-Pedersen J., and Mesli A. Phys Res B 64 (2001) 233202
9. Markevich V.P., Peaker A.R., Murin L.I., and Abrosimov N.V. Appl Phys Lett 82 (2003) 2652
10. Foy C.P. J Phys C 15 (1982) 2059
11. Davies G., Lightowlers E.C., and do Carmo M. J Phys C 16 (1983) 5503
12. Davies G. Semicond Semimet 51B (1998) 1
13. Song L.W., Zhan X.D., Benson B.W., and Watkins G.D. Phys Res B 42 (1990) 5765
14. Alex V., Finkbeiner S., and Weber J. J Appl Phys 79 (1996) 6943
15. Mesli A., Vileno B., Eckert C., Slaoui A., Pedersen C., Larsen A.N., et al. Phys Res B 66 (2002) 045206