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Volumn 21, Issue 4, 2003, Pages 1886-1890
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Synthesis of a material for semiconductor applications: Boron oxynitride prepared by low frequency rf plasma-assisted metalorganic chemical vapor deposition
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Author keywords
[No Author keywords available]
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Indexed keywords
EMISSION SPECTROSCOPY;
FILM GROWTH;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
SYNTHESIS (CHEMICAL);
FEED GASES;
MATERIALS SCIENCE;
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EID: 0141792930
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1585072 Document Type: Conference Paper |
Times cited : (7)
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References (15)
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