Reduction of oxygen contamination in AlN

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2541-2544

  Salzman, J ^a   Prawer, S ^a   Meyler, B ^a   Golan, Y ^b   Shandalov, M ^b   Sauer, R ^c   Teofilov, N ^c  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

^c UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALN THIN FILMS; FULL WIDTH HALF MAXIMUM; GROWTH PARAMETERS; LOW PRESSURES; ORGANOMETALLIC VAPOR PHASE EPITAXY; OXYGEN CONCENTRATIONS; OXYGEN CONTAMINATION; REDUCTION OF OXYGEN;

NITRIDES; ORGANOMETALLICS; OXYGEN; SAPPHIRE; SILICON; X RAY DIFFRACTION;

ALUMINUM NITRIDE;

EID: 33846409548     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303387     Document Type: Conference Paper

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