Controlling shape of InAs1-xSbx quantum structures on InP for quantum dots with 1.55-μm emission

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 558-561

  Kawaguchi, Kenichi ^a   Ekawa, Mitsuru ^a   Akiyama, Tomoyuki ^a   Kuwatsuka, Haruhiko ^a   Sugawara, Mitsuru ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

A1. Nanostructures; A3. Low pressure metal organic vapor phase epitaxy; B2. Semi conducting III V materials

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; SURFACE ACTIVE AGENTS;

QUANTUM STRUCTURES; SEMI-CONDUCTING III-V MATERIALS; TELECOM DEVICES; VICINAL SUBSTRATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846435325     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.074     Document Type: Article

References (20)

1. Carlsson N., Junno T., Montelius L., Pistol M.-E., Samuelson L., and Seifert W. J. Crystal Growth 191 (1998) 347
2. Fréchengues S., Drouot V., Lambert B., Lemoine D., Loualiche S., Corre A.L., and L'Haridon H. Appl. Phys. Lett. 71 (1997) 2818
3. Jeong W.G., Dapkus P.D., Lee U.H., Yim J.S., Lee D., and Lee B.T. Appl. Phys. Lett. 78 (2001) 1171
4. Girard J.F., Dion C., Desjardins P., Ni Allen C., Poole P.J., and Raymond S. Appl. Phys. Lett. 84 (2004) 3382
5. Gong Q., Nötzel R., van Veldhoven P.J., Eijkemans T.J., and Wolter J.H. Appl. Phys. Lett. 84 (2004) 275
6. Akiyama T., Ekawa M., Sugawara M., Kawaguchi K., Sudo H., Kuramata A., Ebe H., and Arakawa Y. IEEE Photon. Technol. Lett. 17 (2005) 1614
7. Kawaguchi K., Ekawa M., Kuramata A., Akiyama T., Ebe H., Sugawara M., and Arakawa Y. Appl. Phys. Lett. 85 (2004) 4331
8. Shchekin O.B., Park G., Huffaker D.L., and Deppe D.G. Appl. Phys. Lett. 77 (2000) 466
9. Sugawara M., Hatori N., Akiyama T., Nakata Y., and Ishikawa H. Jpn. J. Appl. Phys. 40 (2001) L488
10. Kawaguchi K., Ekawa M., Akiyama T., Kuwatsuka H., and Sugawara M. J. Crystal Growth 291 (2006) 154
11. Matsuura T., Miyamoto T., Kageyama T., Ohta M., Matsui Y., Furuhata T., and Koyama F. Jpn. J. Appl. Phys. 2 43 (2004) L605
12. Fréchengues S., Bertru N., Drout V., Lambert B., Robinet S., Lousaliche S., Lacombe D., and Ponchet A. Appl. Phys. Lett. 74 (1999) 3356
13. Li H., Daniels-Race T., and Wang Z. J. Crystal Growth 200 (1999) 321
14. Salem B., Olivares J., Guillot G., Bremond G., Brault J., Monat C., Gendry M., Hollinger G., Hassen F., and Maaref H. Appl. Phys. Lett. 79 (2001) 4435
15. Bierwagen O., and Masselink W.T. Appl. Phys. Lett. 86 (2005) 113110
16. Brault J., Gendry M., Grenet G., Hollinger G., Desiéres Y., and Benyattou T. Appl. Phys. Lett. 73 (1998) 2932
17. Asai H. J. Cryst. Growth 80 (1987) 425
18. González L., García J.M., García R., Briones F., Martínez-Pastor J., and Ballesteros C. Appl. Phys. Lett. 76 (2000) 1104
19. Ohta M., Kanto T., and Yamaguchi K. Jpn. J. Appl. Phys. 45 (2006)
20. Tersoff J., and Tromp R.M. Phys. Rev. Lett. 70 (1993) 2782