Reduction of metal-semiconductor contact resistance by embedded nanocrystals

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 87-89

  Narayanan, V ^a   Liu, Z ^a   Shen, Y M N ^a   Kim, M ^a   Kan, E C ^a  

^a Department of Molecular Biology and Genetics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRON TUNNELING; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY;

EMBEDDED NANOCRYSTALS;

VLSI CIRCUITS;

EID: 0034454557     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. A 20-nm gate-length ultra-thin body p-MOSFET with silicide source/drain
2. Schottky barrier MOSFETS for silicon nanoelectronics
3. Directed self-assembly process for nanoelectronic devices and interconnect
4. Process and device characteristics of self-assembled metal nano-crystal EEPROM
5. Modeling and characterization of Si/SiO2 interface roughness