Characterization of single-event burnout in power MOSFET using backside laser testing

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3145-3152

  Miller, F ^a   Luu, A ^a   Prud'homme, F ^b   Poirot, P ^c   Gaillard, R ^c   Buard, N ^a   Carriere T ^a  

^a AIRBUS GROUP INNOVATIONS   (Germany)

^b ECOLE CENTRALE PARIS   (France)

^c INFODUC SARL   (France)

Author keywords

Breakdown voltage; Burnout; Laser; MOSFET; Single Event Burnout (SEB)

Indexed keywords

ELECTRIC BREAKDOWN; LASER BEAM EFFECTS; SAFE HANDLING;

LASER TESTING; POWER DEVICES; SINGLE-EVENT BURNOUT (SEB);

MOSFET DEVICES;

EID: 33846309204     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.885376     Document Type: Conference Paper

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