Medium-energy heavy-ion single-event-burnout imaging of power mosfet's

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1415-1420

  Musseau, ^a   Torres', ^a   Campbell, ^a   Knudson, ^a   Buchner, ^a   Fischer, ^a   Schlogl ^a   Briand, ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HEAVY IONS; IMAGING TECHNIQUES; INTEGRATED CIRCUIT LAYOUT; ION BOMBARDMENT; MOSFET DEVICES; POWER INTEGRATED CIRCUITS; SEMICONDUCTOR JUNCTIONS; THREE DIMENSIONAL;

CHARGE COLLECTION IMAGES; DRAIN VOLTAGE; HEAVY ION MICROBEAM; SINGLE EVENT BURNOUT;

RADIATION EFFECTS;

EID: 0033332074     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819101     Document Type: Article

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