Enhanced ferroelectric properties of multilayer SrBi2Ta2O9/SrBi2Nb 2O9 thin films for NVRAM applications

Materials Science and Engineering: B

Volumn 130, Issue 1-3, 2006, Pages 36-40

  Ortega, N ^a   Bhattacharya, P ^a   Katiyar, R S ^a  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

Author keywords

Ferroelectric properties; PLD; SBT SBN; Thin films

Indexed keywords

FERROELECTRICITY; MULTILAYERS; PERMITTIVITY; POLARIZATION; POLYCRYSTALLINE MATERIALS; PULSED LASER DEPOSITION; STRONTIUM COMPOUNDS; X RAY DIFFRACTION;

DOUBLE LAYER FILMS; FERROELECTRIC PROPERTIES; SBT-SBN;

THIN FILMS;

EID: 33846284906     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.02.006     Document Type: Article

References (29)

1. Ge S., Ning Z., Dong Z., and Shen M.J. Phys. D: Appl. Phys. 35 (2002) 906
2. Jang J.H., and Yoon K.H. Appl. Phys. Lett. 75 (1999) 130
3. Liu W., Ko J.S., and Zhu W. Thin Solid Films 371 (2000) 254-258
4. Liu W., Jiang B., and Zhu W. Appl. Phys. Lett. 77 7 (2000) 1047-1049
5. Poyato R., Calzada M., and Pardo L. Appl. Phys. Lett. 86 (2005) 042905
6. Auciello O., Scott J.F., and Ramesh R. Phys. Today 51 (1998) 22
7. Scott J.F., and Paz de Araujo C.A. Science 246 (1989) 1400
8. Park B.H., Kang B.S., Bu S.D., Noh T.W., Lee J., and Jo W. Nature 401 (1999) 682
9. Paz de Araujo C.A., Cuchiaro J.D., McMillan L.D., Scott M.C., and Scott J.F. Nature 374 (1995) 627
10. Mitsuya M., Nukaga N., Saito K., Osada M., and Funakubo H. Jpn. J. Appl. Phys. 40 (2001) 3337
11. Park Y., Jang S., Lee J., and Park J. J. Vac. Sci. Technol. A 18 (2000) 7
12. Mitsuya M., Nukaga N., and Funakubo H. Jpn. J. Appl. Phys. 39 (2000) L822
13. Das R.R., Bhattacharya P., Katiyar R.S., and Bhalla A.S. J. Appl. Phys. 92 (2002) 6161
14. Noguchi Y., Miyayama M., Oikawa K., Kamiyama T., Osada M., and Kakihana M. J. Appl. Phys. 41 (2002) 7062
15. Miura K. Appl. Phys. Lett. 80 16 (2002) 2967
16. Kim J.S., Kim I.W., Ahn Ch.W., Song T.K., Kim S.S., Chi S.X., Bae J.S., and Jeong J.H. Jpn. J. Appl. Phys. 41 (2002) 6785
17. Wu Y., and Cao G. J. Mater. Res. 15 7 (2000) 1583
18. Ezhilvalavan S., Samper V., Seng T.W., Junmin X., and Wang J. J. Appl. Phys. 96 4 (2004) 2181
19. Kim C.Y., Koo C.Y., Woo D.C., and Lee H.Y. Jpn. J. Appl. Phys. 39 Part 1, 9B (2000) 5521
20. Yang P., Zhou N., Zheng L., Lu H., and Lin C. J. Phys. D: Appl. Phys. 30 (1997) 527
21. Lee H.N., Visinoiu A., Senz S., Harnagea C., Pignolet A., Hesse D., and Gösele U. J. Appl. Phys. 88 11 (2000) 6658
22. Das R.R., Bhattacharya P., Pérez W., and Katiyar R.S. J. Vac. Sci. Technol. A 20 2 (2002) 375
23. Das R.R., Bhattacharya P., and Katiyar R.S. Appl. Phys. Lett. 81 9 (2002) 1672
24. Pérez W., Das R.R., Bhattacharya P., and Katiyar R.S. Integr. Ferroelectr. 42 (2002) 365
25. Rae A.D., Thompson J.G., and Withers R.L. Acta Crystallogr. B 48 (1992) 418
26. Das R.R., Dobal P.S., Dixit A., Pérez W., Tomar M.S., Melgarejo R.E., and Katiyar R.S. Mater. Res. Soc. Symp. Proc. 655 (2000) CC5.6.1
27. Moret M.P., Zallen R., Newnham R.E., Joshi P.C., and Desu S.B. Phys. Rev. B 57 (1998) 5715
28. Dobal P.S., and Katiyar R.S. Raman Spectrosc. 33 (2002) 405
29. Bao D., Lee S.K., Zhu X., Alexe M., and Hesse D. Appl. Phys. Lett. 86 (2005) 082906