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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 9 B, 2000, Pages 5521-5524

Ferroelectric Sr2(Nb, Ta)2O7 thin films prepared by chemical solution deposition

(4) Kim, Chang Young a Koo, Chang Young a Woo, Dong Chan a Lee, Hee Young a

a Yeungnam University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; DEPOSITION; FERROELECTRIC MATERIALS; FILM PREPARATION; LEAKAGE CURRENTS; PERMITTIVITY; REMANENCE; SCANNING ELECTRON MICROSCOPY; SOLUTIONS; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

FERROELECTRIC GATE FIELD EFFECT TRANSISTOR; REMANENT POLARIZATION; SOL-GEL METHOD;

THIN FILMS;

EID: 0034262634 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.5521 Document Type: Article

Times cited : (8)

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