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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 2 A, 2001, Pages 472-475

The formation of nitridation damage during the growth of GaN on GaAs(001)

(3) Zsebok O a Thordson, J V a Andersson, T G a

a UNIVERSITY OF GOTHENBURG (Sweden)

Author keywords

GaAs; GaN; Molecular beam epitaxy; Nitridation damage model; RHEED monitoring

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPOSITION EFFECTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDING; NITROGEN; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; SURFACE TREATMENT;

NEAR STOICHIOMETRIC GROWTH; NITRIDATION DAMAGE; SURFACE RECONSTRUCTION TRANSITION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035246261 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.472 Document Type: Article

Times cited : (16)

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