Passivation of air-exposed AlGaAs using low frequency plasma-enhanced chemical vapor deposition of silicon nitride

Applied Physics Letters

Volumn 89, Issue 9, 2006, Pages

  Jaouad, A ^a   Aimez, V ^a  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CAPACITORS; FERMI LEVEL; MISFET DEVICES; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICES; SILICON NITRIDE;

ALGAAS; LOW FREQUENCY PLASMA; METAL-INSULATOR-SEMICONDUCTOR CAPACITORS; MINIMUM INTERFACE STATE DENSITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33748253036     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2345030     Document Type: Article

References (14)

1. G. P. Schwartz, B. V. Dutt, and G. J. Gualtieri, Appl. Phys. Lett. 39, 52 (1981).
2. N. A. Ives, G. W. Stupian, and M. S. Leung, Appl. Phys. Lett. 50, 256 (1987).
3. R. Schatz and C. B. Bethea, J. Appl. Phys. 76, 2509 (1994).
4. J. Moisson, K. Elcess, F. Houzai, J. Y. Marzin, J. M. Gerard, F. Barthe, and M. Bensoussan, Phys. Rev. B 41, 12945 (1990).
5. Y. L. Chang, I. H. Tan, Y. H. Zhang, P. Bimberg, J. Merz, E. Hu, A. Forva, and V. Emiliani, J. Appl. Phys. 74, 5144 (1993).
6. Z. Sobiesierski, D. I. Westwood, D. A. Woolf, T. Fukui, and H. Hasegawa, J. Vac. Sci. Technol. B 11, 1723 (1993).
7. C. J. Sandroff, R. N. Nottenburg, J. C. Bischoff, and R. Bhat, Appl. Phys. Lett. 51, 33 (1987).
8. W. S. Hobson, F. Ren, U. Mohideen, R. E. Slusher, M. L. Schnoes, and S. J. Pearton, J. Vac. Sci. Technol. A 13, 642 (1995).
9. R. T. Yoshioka, L. E. M. de Barros, J. A. Diniz, and J. W. Swart, IEEE MTT-S Int. Microwave Symp. Dig. 1, 108 (1999).
10. A. Jaouad, V. Aimez, and Ç. Aktik, Electron. Lett. 40, 1024 (2004).
11. S. Kochowski, K. Nitsh, B. Paszkiewicz, and R. Paszkiewicz, Thin Solid Films 444, 208 (2003).
12. E. H. Nicollian, and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982), p. 214.
13. N. N. Berchenko and Yu. V. Medvedev, Russ. Chem. Rev. 63, 623 (1994).
14. K. D. Choquette, R. S Freund, M. Hong, H. S. Luftman, S. N. G. Chu, J. P. Mannaerts, and R. C. Wetzel, J. Vac. Sci. Technol. B 11, 2025 (1993).