Wet chemical nitridation of GaAs(001) surface

Journal De Physique. IV : JP

Volumn 132, Issue , 2006, Pages 263-267

  Berkovits, V L ^a   Karpenko, A N ^a   Masson, L ^b   Ulin, V P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b CAMPUS DE LUMINY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; ELECTRON SPECTROSCOPY; NITRIDING; NITROGEN; SCANNING TUNNELING MICROSCOPY; THIN FILMS;

RESIDUAL IMPURITIES; STRUCTURAL PROPERTIES; TUNNELLING MICROSCOPY;

GALLIUM COMPOUNDS;

EID: 33744965160     PISSN: 11554339     EISSN: 17647177     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:2006132050     Document Type: Conference Paper

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