Modeling and simulation of thermal chlorine etching of gallium arsenide with application to real-time feedback control

Mathematical and Computer Modelling

Volumn 35, Issue 3-4, 2002, Pages 335-360

  Rosen, I G ^a   Parent, T ^b   Mancera, R ^a   Chen, P ^b   Madhukar, A ^b  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^b University of Southern California   (United States)

Author keywords

Adaptive control; Semiconductor manufacturing; Spectroscopic ellipsometry; Thermal chlorine etching

Indexed keywords

EID: 0036166945     PISSN: 08957177     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0895-7177(01)00169-8     Document Type: Article

References (15)

1. Intelligent model-based control system employing in-situ ellipsometry
2. End point and etch rate control using dual-wavelength laser reflectometry with a nonlinear estimator
3. Integration of in-situ spectral ellipsometry with MMST machine control
4. High speed spectral ellipsometry for in-situ diagnostics and process control
5. In-situ spectral ellipsometry for real time thickness measurement: Etching multilayer stacks
6. In-situ spectral ellipsometry for real time measurement and control
7. In-situ real time ellipsometry for film thickness measurement and control
8. Kinetics of the reaction of gallium arsenide with molecular chlorine
9. Evidence for reversible dissociative adsorption in the reaction of molecular chlorine with gallium arsenide
10. Temperature-dependent pseododielectric functions of GaAs determined by spectroscopic ellipsometry
11. 2 chemical dry etching of GaAs under high vacuum conditions - Crystallographic etching and its mechanism
12. 2 using a new ultrahigh-vacuum dry-etching molecular-beam-epitaxy system
13. 2 adsorption and chloride desorption at GaAs(001) surfaces: Site and coverage dependence
14. The chlorides of gallium