Structuring of GaAs. I. Chemical dry etching: Temperature and chlorine pressure dependence of etch rates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 1964-1969

  Dienelt, Jens ^a   Von Sonntag, Justus ^a   Zimmer, Klaus ^a   Rauschenbach, Bernd ^a  

^a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENTIAL EQUATIONS; DRY ETCHING; ION BEAMS; LIGHTING; MASKS; OPTOELECTRONIC DEVICES; PHOTOVOLTAIC CELLS; PRESSURE EFFECTS; REACTION KINETICS; SILICON NITRIDE; STOICHIOMETRY; TEMPERATURE PROGRAMMED DESORPTION;

HIGH FREQUENCY CIRCUITS; ION BEAM ETCHING; KINETIC PARAMETERS; THERMAL DESORPTION KINETICS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4944259923     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1775002     Document Type: Article

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