A new combination-erase technique for erasing nitride based (SONOS) nonvolatile memories

IEEE Electron Device Letters

Volumn 24, Issue 4, 2003, Pages 257-259

  Chindalore, Gowrishankar L ^a   Swift, Craig T ^a   Burnett, David ^a  

^a IEEE   (United States)

Author keywords

Combination erase; Data retention; Fowler Nordheim tunneling (FNT); Gate disturb; Hot electron injection; Hot hole injection (HHI); Nitride traps; SONOS memory

Indexed keywords

ELECTRIC FIELDS; ELECTRON TUNNELING; GATES (TRANSISTOR); HOT CARRIERS; NITRIDES; OXIDES; RELIABILITY;

COMBINATION ERASE TECHNIQUE; FOWLER-NORDHEIM TUNNELING; HOT HOLE INJECTION; NONVOLATILE MEMORIES; OXIDE THICKNESS;

SEMICONDUCTOR STORAGE;

EID: 0038104305     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.810883     Document Type: Letter

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