All-optical switching due to state filling in quantum dots

Applied Physics Letters

Volumn 84, Issue 20, 2004, Pages 4059-4061

  Prasanth, R ^a   Haverkort, J E M ^a   Deepthy, A ^a   Bogaart, E W ^a   Van Der Tol, J J G M ^a   Patent, E A ^a   Zhao, G ^a   Gong, Q ^a   Van Veldhoven, P J ^a   Notzel R ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ATOMIC FORCE MICROSCOPY; CHEMICAL BEAM EPITAXY; INDIUM COMPOUNDS; LASER APPLICATIONS; OPTICAL SWITCHES; PHASE TRANSITIONS; REFRACTIVE INDEX; WAVEGUIDES;

ION ETCHING; LASER EXCITATION; THERMAL ACTIVATION; WAVELENGTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 2942596569     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1751617     Document Type: Article

References (17)

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17. The capped and annealed QDs will probably have a smaller height than the uncapped ones. Assuming a smaller QD height would result in an even smaller switching energy. We based our derived switching energy on the uncapped QDs, thus providing an upper limit to the switching energy.