Fabrication and field emission property of a Si nanotip array

Nanotechnology

Volumn 17, Issue 22, 2006, Pages 5573-5576

  Huang, G S ^a,b   Wu, X L ^a   Cheng, Y C ^a   Li, X F ^a   Luo, S H ^b,c   Feng, T ^c   Chu, Paul K ^b  

^a NANJING UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ELECTRIC CURRENTS; INTERFACES (MATERIALS); MASKS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY;

ANODIZATION; EMISSION CURRENT; FIELD EMISSION PROPERTIES; QUANTUM TUNNELLING EFFECTS;

SILICON WAFERS;

EID: 33846047426     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/22/008     Document Type: Article

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