Controlling defect and Si nanoparticle luminescence from silicon oxynitride films with CO 2 laser annealing

Applied Physics Letters

Volumn 88, Issue 9, 2006, Pages

  Tewary, Anuranjita ^a   Kekatpure, Rohan D ^a   Brongersma, Mark L ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITON RECOMBINATION; FORMING GAS ANNEALING; ISOSBESTIC POINT; LOCAL HEATING; POWER DENSITIES;

ANNEALING; CARBON DIOXIDE; CRYSTALLINE MATERIALS; EXCITONS; LUMINESCENCE; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 33644663617     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2178769     Document Type: Article

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