Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor

Applied Physics Letters

Volumn 86, Issue 4, 2005, Pages

  Cho, K H ^a   Choi, B H ^a   Son, S H ^a   Hwang, S W ^a   Ahn, D ^b   Park, B G ^c   Naser, B ^d   Lin, J F ^d   Bird, J P ^d,e  

^a Korea University   (South Korea)

^b University of Seoul   (South Korea)

^c Seoul National University   (South Korea)

^d Arizona State University   (United States)

^e UNIVERSITY AT BUFFALO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL ION IMPLANTATION; DOUBLE-DOT TRANSPORT; NANODEVICES; NANOWIRE TRANSISTORS;

CAPACITANCE; ELECTRIC CONDUCTANCE; INTERFACES (MATERIALS); OXIDATION; POLYSILICON; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 13644274231     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1854738     Document Type: Article

References (12)

1. J. H. F. Scott-Thomas, S. B. Field, M. A. Kastner, H. I. Smith, and D. A. Antoniadia, Phys. Rev. Lett. 62, 583 (1989).
2. R. A. Smith and H. Ahmed, J. Appl. Phys. 81, 2699 (1997).
3. A. Tilke, R. H. Blick, H. Lorentz, and J. P. Kotthaus, Appl. Phys. Lett. 75, 3704 (1999).
4. L. P. Rokhinson, L. J. Guo, S. Y. Chou, and D. C. Tsui, Appl. Phys. Lett. 76, 1591 (2000).
5. B. H. Choi, Y. S. Yu, D. H. Kim, S. H. Son, K. H. Cho, S. W. Hwang, D. Ahn, and B.-G. Park, Physica E (Amsterdam) 13, 946 (2002).
6. H. Ishikuro and T. Hiramoto, Appl. Phys. Lett. 74, 1126 (1999).
7. J. A. Nixon and J. H. Davies, Phys. Rev. B 41, 7929 (1990).
8. D. H. Kim, S.-K. Sung, K. R. Kim, J. D. Lee, B.-G. Park, B. H. Choi, S. W. Hwang, and D. Ahn, IEEE Trans. Electron Devices 49, 627 (2002).
9. Y. Ono, Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase, IEEE Trans. Electron Devices 47, 147 (2000).
10. 1/2=15.8 nm.
11. T. Ouisse, J. Appl. Phys. 76, 5989 (1994).
12. K. Takashima, Y. Hirayama, A. Fujiwara, S. Horiguchi, and Y. Takahashi, Physica E (Amsterdam) 22, 72 (2004).