Sb on In/Si(111) processes with dynamically observable LEEM, selected area LEED and chemically analyzed SR-XPEEM

Surface and Interface Analysis

Volumn 38, Issue 12-13, 2006, Pages 1773-1776

  Nakaguchi, A ^a   Guo, F Z ^b   Hashimoto, M ^a   Ueda, M ^a   Yasue, T ^a   Matsushita, T ^b   Tamenori, Y ^b   Kinoshita, T ^b   Kobayashi, K ^b   Koshikawa, T ^a  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

^b SPring 8/JASRI ^*  (Japan)

Author keywords

In Si(111); LEEM; Sb; Selected area LEED; SR XPEEM

Indexed keywords

ADSORPTION; ELECTRON MICROSCOPY; INDIUM; LOW ENERGY ELECTRON DIFFRACTION; SILICON; SYNCHROTRON RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL INTERACTION; DYNAMIC GROWTH BEHAVIOR; LOW ENERGY ELECTRON MICROSCOPY (LEEM); X-RAY GENERATED PHOTO EMISSION ELECTRON MICROSCOPY (XPEEM);

ANTIMONY;

EID: 33845927707     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2502     Document Type: Conference Paper

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