Quantitative STM investigation of the phase formation in submonolayer In/Si(111) system

Applied Surface Science

Volumn 159, Issue , 2000, Pages 237-242

  Zotov, A V ^a,b,c   Saranin, A A ^a,b,d   Kubo, O ^a   Harada, T ^a   Katayama, M ^a   Oura, K ^a  

^a OSAKA UNIVERSITY   (Japan)

^b INSTITUTE OF AUTOMATION AND CONTROL PROCESSES   (Russian Federation)

^c VLADIVOSTOK STATE UNIVERSITY OF ECONOMICS AND SERVICE   (Russian Federation)

^d FAR EASTERN FEDERAL UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; MASS TRANSFER; MONOLAYERS; MORPHOLOGY; PHASE COMPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SURFACE ROUGHNESS;

MASS TRANSPORT; PHASE FORMATION; SUBMONOLAYERS;

SEMICONDUCTING FILMS;

EID: 0034205184     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00156-2     Document Type: Article

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