SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 493, Issue 1-3, 2001, Pages 373-380

Twinned InSb molecular layer on Si(1 1 1) substrate

(5) Rao, B V a Gruznev, D a Mori, M a Tambo, T a Tatsuyama, C a

a UNIVERSITY OF TOYAMA (Japan)

Author keywords

Indium antimonide; Silicon; Surface relaxation and reconstruction

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; COALESCENCE; DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE RELAXATION AND RECONSTRUCTION;

SEMICONDUCTING SILICON;

EID: 0035500582 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01242-0 Document Type: Conference Paper

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.