Role of In(4×1) superstructure on the heteroepitaxy of InSb on Si(111) substrate

Applied Surface Science

Volumn 162, Issue , 2000, Pages 263-269

  Rao, B V ^a   Okamoto, T ^a   Shinmura, A ^a   Gruznev, D ^a   Tambo, T ^a   Tatsuyama, C ^a  

^a UNIVERSITY OF TOYAMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; SURFACE PHENOMENA; SURFACE STRUCTURE; THERMAL EFFECTS;

HETEROEPITAXIAL GROWTH; INDIUM ANTIMONIDE; SURFACE RECONSTRUCTION;

SEMICONDUCTING FILMS;

EID: 0034250370     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00202-6     Document Type: Article

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