Comment on "Influence of the doping element on the electron mobility in n silicon" [J. Appl. Phys. 83, 3096 (1998)]

Journal of Applied Physics

Volumn 85, Issue 11, 1999, Pages 7984-7985

  Fischetti, M V ^a   Laux, S E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041758566     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370619     Document Type: Review

References (6)

1. G. Kaiblinger-Grujin, H. Kosina, and S. Selberherr, J. Appl. Phys. 83, 3096 (1998).
2. H. Nara and A. Morita, J. Phys. Soc. Jpn. 21, 1852 (1966).
3. See, for example, R. Resta, Phys. Rev. B 16, 2717 (1977); Z. H. Levine and S. G. Louie, ibid. 25, 6310 (1982), and references therein, for other qualitatively identical expressions.
4. See, for example, R. Resta, Phys. Rev. B 16, 2717 (1977); Z. H. Levine and S. G. Louie, ibid. 25, 6310 (1982), and references therein, for other qualitatively identical expressions.
5. H. Nara, J. Phys. Soc. Jpn. 20, 778 (1965).
6. R. Resta, Phys. Rev. B 19, 3022 (1979).