Carrier and mobility profiling of ultra-shallow junctions in sb implanted silicon

Electronics Letters

Volumn 40, Issue 12, 2004, Pages 774-775

  Alzanki, T ^a   Gwilliam, R ^a   Emerson, N ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CARRIER CONCENTRATION; HALL EFFECT; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON;

ATOMIC PROFILES; DRAIN EXTENSIONS; ELECTRON CONCENTRATIONS; JUNCTION DEPTHS;

SEMICONDUCTOR JUNCTIONS;

EID: 3042636634     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040493     Document Type: Article

References (3)

1. Alzanki, T., Gwilliam, R., Emerson, N., Tabatabaian, Z., Jeynes, C., and Sealy, B.J.: 'Concentration profiles of antimony-doped shallow layers in silicon', Semicond. Sci. Technol., 2004 (in press)
2. Alzanki, T., Gwilliam, R., Emerson, N., and Sealy, B.J.: 'Low temperature processing of antimony implanted silicon', J. Electron. Mater., 2004 (in press)
3. Collart, E.J.H., Kirkwood, D., Vandervorst, W., Brijs, B., Van den Berg, J.A., Wemer, M., and Noakes, T.C.Q.: 'Characterisation of low energy antimony (2-5 keV) implantation into silicon". Proc. IEEE Int. Conf. on Ion Implantation Technology, Taos, NM, USA, 2003, pp. 147-150