Influence of the doping element on the electron mobility in n-silicon

Journal of Applied Physics

Volumn 83, Issue 6, 1998, Pages 3096-3101

  Kaiblinger Grujin, G ^a   Kosina, H ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001115909     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367067     Document Type: Article

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