An 0.3-μm Si epitaxial base BiCMOS technology with 37-GHz fmax and 10-V BVceo for RF telecommunication

IEEE Transactions on Electron Devices

Volumn 46, Issue 4, 1999, Pages 712-721

  Nil, Hideaki ^a   Yoshino, Chihiro ^a   Yoshitomi, Sadayuki ^a   Inoh, Kazumi ^a   Furuya, Hiromi ^a   Nakajima, Hiroomi ^a   Sugaya, Hiroyuki ^a   Naruse, Hiroshi ^a   Katsumata, Yasuhiro ^a   Iwai, Hiroshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Base; BiCMOS; Bipolar; Epitaxy; High frequency

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; ELECTRIC CURRENTS; LSI CIRCUITS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

EPITAXIAL INTRINSIC BASE; MIXED ANALOG DIGITAL SYSTEMS;

CMOS INTEGRATED CIRCUITS;

EID: 0032624228     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.753705     Document Type: Article

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