Silicon nanowires formation in CMOS compatible manner

International Journal of Nanoscience

Volumn 5, Issue 4-5, 2006, Pages 445-451

  Agarwal, Ajay ^a   Balasubramanian, N ^a   Ranganathan, N ^a   Kumar, R ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

CMOS; Sensors; Silicon nanowire; Vertically aligned

Indexed keywords

BIOSENSORS; CMOS INTEGRATED CIRCUITS; FABRICATION; PLASMA ETCHING; SILICON WAFERS; TRANSISTORS;

GATE ALL AROUND TRANSISTOR; NANOELECTRONICS; SILICON NANOWIRE (SINW); SINGLE ELECTRON TRANSISTORS;

NANOSTRUCTURED MATERIALS;

EID: 33845672175     PISSN: 0219581X     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0219581x06004619     Document Type: Conference Paper

References (20)

1. F. Patolsky, G. Zheng, O. Hayden, M. Lakadamyali, X. Zhuang and C. M. Lieber, Proc. Natl. Acad. Sci. USA 101, 14017 (2004).
2. J.-I. Hahm and C. M. Lieber, Nano Lett. 4, 51 (2004).
3. Z. Li, Y. Chen, X. Li, T. I. Kamins, K. Nauka and R. S. Williams, Nano Lett. 4, 245 (2004).
4. J. Kedzierski, J. Bokor and E. Anderson, J. Vac. Sci. Technol. B 17, 3244 (1999).
5. G. Zheng, W. Lu, S. Jin and C. M. Lieber, Adv. Mater. 16, 1890 (2004).
6. R. S. Wager and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).
7. A. M. Morales and C. M. Lieber, Science 279, 208 (1998).
8. X. Duan and C. M. Lieber, Adv. Mater. 12, 298 (2000).
9. S. Q. Feng, D. P. Yu, H. Z. Zhang, Z. G. Bai and Y. Ding, J. Cryst. Growth 209, 513 (2000).
10. US patent application publication # US 2002/0001977 A1.
11. US patent application publication # US 2003/0189202 A1.
12. J. D. Holmes, K. P. Johnston, R. C. Doty and B. A. Korgel, Science 287, 1471 (2000).
13. J. L. Gole, J. D. Stout, W. L. Rauch and Z. L. Wang, Appl. Phys. Lett. 76, 2346 (2000).
14. H. I. Liu, D. K. Biegelsen, N. M. Johnson, F. A. Ponce and R. F. W. Pease, J. Vac. Sci. Technol. B 11, 2532 (1993).
15. H. I. Liu, D. K. Biegelsen, F. A. Ponce, N. M. Johnson and R. F. W. Pease, Appl. Phys. Lett. 64, 1383 (1994).
16. J. Kedzierskia and J. Bokor, J. Vac. Sci. Technol. B 15, 2825 (1997).
17. World IP Organization Patent # WO 2004/003535 A1.
18. V. Milanoviæ and L. Doherty, Proceedings of IMECE'02, New Orleans, Louisiana, 17-22 November 2002.
19. B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1965).
20. J. Omachi, R. Nakamura, K. Nishiguchi and S. Oda, Mat. Res. Soc. Symp. Proc. 638, F5.3.1 (2001).