Variation of photoluminescence from Si nanostructures in SiO2 matrix with Si+ post implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 254, Issue 1, 2007, Pages 87-92

  Serincan, U ^a,b   Kulakci, M ^a   Turan, R ^a   Foss, S ^c   Finstad, T G ^c  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^b ANADOLU UNIVERSITY   (Turkey)

^c UNIVERSITY OF OSLO   (Norway)

Author keywords

Ion implantation; Nanocluster; Nanocrystal; PL; Post implantation; Si; SiO2

Indexed keywords

ANNEALING; DEFECTS; ION IMPLANTATION; PHOTOLUMINESCENCE; SILICON;

MATRIX DEFECTS; NANOCLUSTERS; NANOINCLUSIONS;

NANOSTRUCTURED MATERIALS;

EID: 33845634305     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.081     Document Type: Article

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