III-V nanowires for optoelectronics

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6352 II, Issue , 2006, Pages

  Kim, Yong ^a,b   Gao, Q ^a   Joyce, H J ^a   Tan, H H ^a   Jagadish, C ^a   Paladugu, M ^c   Zou, J ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b Dong A University   (South Korea)

^c UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

Crystal structure; Metal organic chemical vapour deposition; Nanowire; Photoluminescence

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPE; KINKING EFFECT; NANOWIRES;

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; ELECTRIC WIRE; GOLD; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

OPTOELECTRONIC DEVICES;

EID: 33845630683     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.692715     Document Type: Conference Paper

References (24)

1. R. S. Wagner and W. C. Ellis, "Vapor-liquid-solid mechanism of single crystal growth," Appl. Phys. Lett. 4, 89-90 (1964).
2. E. I. Givargizov, " Fundamental aspects of VLS growth," J. Cryst. Growth 31, 20-30 (1975).
3. K. Hiruma, M. Yazawa, K. Haraguchi, K. Ogawa, T. Katsuyama, M. Koguchi, and H. Kakibayashi," GaAs free-standing quantum-size wires," J. Appl. Phys. 74, 3162-3171 (1993).
4. C. M. Lieber, "Nanoscale science and technology: building a big future from small things," MRS bull. 28, 486-491 (2003).
5. X. Duan, Y. Huang, R. Agawal, and C. M. Lieber, " Single-nanowire electrically driven lasers," Nature 421, 241-245 (2003).
6. M. H. Huang, S. Mao, H. Feick, H. Van, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, " Room-temperature ultraviolet nanowire nanolasers," Science 292, 1897-1899 (2001).
7. M. T. Bjork, B. J. Ohlsson, C. Thelander, A. I. Persson, K. Deppert, L. R. Wallenberg, and L. Samuelson," Nanowire resonant tunnelling diodes," Appl. Phys. Lett. 81, 4458-4460 (2002).
8. C. Thelander, H. A. Nilsson, L. E. Jensen, and L. Samuelson," Nanowire single-electron memory," Nano Lett. 4, 1987-1991 (2005).
9. O. Hayden, R. Agarwal, and C. M. Lieber, "Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection," Nat. Mater. 5, 352-356 (2006).
10. E. P. A. M. Bakkers, J. A. Van Dam, S. D. Franceschi, L. P. Kouwenhoven, M. Kaiser, M. Verheijen, H. Wondergem, and P. van der Sluis, " Epitaxial growth of InP nanowires on germanium," Nat. Mater. 3, 769-773 (2004).
11. T. Martensson, C. P. T. Svensson, B. A. Wacaser, M. W. Larsson, W. Seifert, K. Deppert, A. Gustafsson, L. R. Wallenberg, and L. Samuelson," Epitaxial III-V nanowires on silicon," Nano Lett. 4, 1987-1990 (2004).
12. A. I. Persson, M. W. Larsson, S. Stenstrom, B. J. Ohlsson, L. Samuelson, and L. R. Wallenberg, "Solid-phase diffusion mechanism for GaAs nanowire growth," Nat. Mater. 3, 677-68 (2004).
13. L. Schubert, P. Werner, N. D. Zakharov, G. Gerth, F. M. Kolb, L. Long, U. Gosele, and T. Y. Tan, "Silicon nanowhiskers grown on 〈111〉 Si substrate by molecular-beam epitaxy," Appl. Phys. Lett., 84, 4968-4970 (2004).
14. W. Seifert, M. Borgstrom, K. Deppert, K. A. Dick, J. Johansson, M. W. Larsson, T. Mårtensson, N. Sköld, C. P. T. Svensson, B. A. Wacaser, L. R. Wallenberg, and L. Samuelson, "Growth of one-dimensional nanostructures in MOVPE," J. Cryst. Growth 272, 211-220 (2004).
15. 1-xP Core-Shell Nanowires," Nano Lett. 5, 1943-1947 (2005).
16. T. B. Hoang, L. V. Titova, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, Y. Kim, H. J. Joyce, and C. Jagadish, "Temperature- dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires," unpublished.
17. A. B. Greytak, L. J. Lauhon, M. S. Gudiksen, and C. M. Lieber, "Growth and transport properties of complementary germanium nanowire field-effect transistors," Appl. Phys. Lett. 84, 4176-4178 (2004).
18. H. Adhikari, A. F. Marshall, C. E. D. Chidsey, and P. C. McIntyre, "Germanium Nanowire Epitaxy: Shape and Orientation Control," Nano Lett., 6, 318-323 (2006).
19. J. Johansson, C. P. T. Svensson, T. Mårtensson, L. Samuelson, and W. Seifert, " Mass transport model for semiconductor nanowire growth," J. Phys. Chem. B 109, 3567-13571 (2005).
20. Y. Kim, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, M. Paladugu, J. Zou, and A. A. Suvorova, "Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires," Nano Lett. 6, 599-604 (2006).
21. H. C. Casey, Jr. and E. Buehler, "Evidence for low surface recombination velocity on n-type InP," Appl. Phys. Lett. 30(5), 247-249 (1977).
22. M. Matilla, T. Hakkarainen, M. Mulot and H. Lipsanen, "Crystal-structure-dependent photoluminescence from InP nanowires," Nanotechnology 17, 1580-1583 (2006).
23. M. Murayama and T. Nakayama, "Chemical trend of band offsets at wurtzite/zinc-blende heterocrystalline semiconductor interfaces," Phys. Rev. B 49, 4710-4724 (1994).
24. A. H. Chin, S. Vaddiraju, A. V. Maslov, C. Z. Ning, M. K. Sunkara, and M. Meyyappan," Near-infrared semiconductor subwavelength-wire lasers," Appl. Phys. Lett. 88, 163115-163115 (2006).