Trap competition inducing R.T.S noise in saturation range in N-MOSFETs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5844, Issue , 2005, Pages 41-51

  Leyris, C ^a,b   Foffman, A ^a   Valenza, M ^a   Vildeuil, J C ^b   Roy, F ^b  

^a UNIV MONTPELLIER   (France)

^b STMICROELECTRONICS   (France)

Author keywords

1 f, r.t.s fluctuations; Multi trap activities; N mosfets; Saturation range; Trap competition

Indexed keywords

ELECTRIC POTENTIAL; FREQUENCY DOMAIN ANALYSIS; MOSFET DEVICES;

1/F, R.T.S FLUCTUATIONS; MULTI-TRAP ACTIVITIES; N-MOSFETS; SATURATION RANGE; TRAP COMPETITION;

SPURIOUS SIGNAL NOISE;

EID: 28444435524     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.609375     Document Type: Conference Paper

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