Thermal nitridation of chemical dielectrics as an easy approach to ultra-thin gate oxide processing

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 163-166

  Bidaud, M ^a   Carrere, J P ^b   Guyader, F ^b   Juhel, M ^b   Pantel, R ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; NITRIC OXIDE;

DRIVE CURRENTS; EQUIVALENT OXIDE THICKNESS; GATE LEAKAGES; NITRIDATION TEMPERATURE; NITRIDE FILMS; OXYNITRIDATION; THERMAL NITRIDATION; ULTRA THIN GATE OXIDE;

OXIDE FILMS;

EID: 84907684042     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194895     Document Type: Conference Paper

References (3)

1. M. Fujiwara, M. Takayanagi, and Y. Toyoshima, "New optimization guidelines for sub-O.lum CMOS technologies with 2nm NO gate oxynitrides", VLSI 1999.
2. I. Trimaille, JJ. Ganem, L. Gosset, O. Bailly, S. Rigo, JL. Cantin, and H.J. Von Bardeleben, "Furnace oxynitridation in nitric oxide of thin silicon oxide: atomic transport mechanisms and interfacial microstructure", MRS 1999.
3. J.R. Hauser, and K. Ahmed, "Characterization of ultra-thin oxides using electrical C-V and I-V measurements", 1998