1/f noise behaviors of NO-nitrided n-MOSFETs

Solid-State Electronics

Volumn 45, Issue 3, 2001, Pages 431-433

  Xu, J P ^a   Lai, P T ^b   Cheng, Y C ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

1 f Noise; Hot carrier stress; MOS devices; MOSFETs; Nitridation

Indexed keywords

ANNEALING; HOLE TRAPS; HOT CARRIERS; INTERFACES (MATERIALS); NITRIDING; NITROGEN OXIDES; SPURIOUS SIGNAL NOISE; THERMODYNAMIC STABILITY;

NITRIDED GATE OXIDES;

MOSFET DEVICES;

EID: 0035277686     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00046-6     Document Type: Article

References (12)

1. High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient
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3. Furnace grown gate oxynitride using nitric oxide (NO)
4. +-polysilicon gate MOS device application
5. MOS characteristics of ultrathin NO-grown oxynitrides
6. Effects of nitric oxide annealing of thermally grown silicon dioxide characteristics
7. A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors
8. Low frequency noise in MOS transistors - I theory
9. Theory and experiment on the 1/f noise in p-channel metal-oxide-semiconductor field-effect transistors at low drain bias
10. 2O