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Volumn 134, Issue , 2007, Pages 353-367

Core structures and kink migrations of partial dislocations in 4H-SiC

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EID: 33845505659     PISSN: 13596640     EISSN: 13645498     Source Type: Journal    
DOI: 10.1039/b603920k     Document Type: Conference Paper
Times cited : (29)

References (37)
  • 18
    • 77956769355 scopus 로고    scopus 로고
    • F. R. N. Nabarro and M. S. Duesbery, North-Holland, Amsterdam, pp. 443-504
    • K. Maeda, S. Takeuchi, in Dislocation in Solids, ed., F. R. N. Nabarro, and, M. S. Duesbery,, North-Holland, Amsterdam, 1996, vol. 10, pp. 443-504
    • (1996) Dislocation in Solids, Ed.
    • Maeda, K.1    Takeuchi In, S.2
  • 24
    • 0003597031 scopus 로고
    • G. L. Harris, Institution of Electrical Engineers, London, UK, 4
    • G. L. Harris, in Properties of Silicon Carbide, ed., G. L. Harris,, Institution of Electrical Engineers, London, UK, 1995, 4
    • (1995) Properties of Silicon Carbide, Ed.
    • Harris In, G.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.